AOC2423 20v p-channel mosfet general description product summary v ds i d (at v gs =-10v) -2a r ds(on) (at v gs =-10v) < 80m w r ds(on) (at v gs =-4.5v) < 95m w r ds(on) (at v gs =-2.5v) < 120m w typical esd protection hbm class2 symbol the AOC2423 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v while retaining a 12v v gs(max) rating. maximum units parameter absolute maximum ratings t a =25c unless otherwise noted -20v top view bottom view pin1(g) s g d g d 2 3 1 4 s s mcsp 0.97x0.97a_4 top view bottom view symbol v ds v gs t a =25c i d i dm t a =25c p d t j , t stg symbol t 10s steady-state note 1. mounted on minimum pad pcb note 2. pw <300 s pulses, duty cycle 0.5% max source current (dc) note1 power dissipation note1 c/w r q ja 110 160 140 units parameter w v maximum units parameter max junction and storage temperature range -55 to 150 drain-source voltage -20 a -2 -20 v 12 gate-source voltage source current (pulse) note2 0.6 c/w maximum junction-to-ambient a d 200 maximum junction-to-ambient a c thermal characteristics typ rev 0 : oct. 2012 www.aosmd.com page 1 of 5
AOC2423 symbol min typ max units bv dss -20 v v ds =-20v, v gs =0v -1 t j =55c -5 i gss 10 m a v gs(th) gate threshold voltage -0.5 -0.85 -1.2 v 65 80 t j =125c 86.5 107 74 95 m w 92 120 m w g fs 6.5 s v sd -0.74 -1 v c iss 470 pf c oss 92 pf c rss 60 pf r g 12.5 w q g (10v) 10 nc q g (4.5v) 5 nc q gs 2 nc q gd 0.5 nc t d(on) 7.5 ns t r 10 ns t d(off) 50 ns t f 24 ns t rr 8.5 ns q rr 3 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =-1a, di/dt=100a/ m s input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =-10v, v ds =-10v, r l =10 w , r gen =3 w gate resistance v gs =-4.5v, i d =-1a v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =-10v, v ds =-10v, i d =-1a gate source charge gate drain charge total gate charge gate-body leakage current forward transconductance diode forward voltage r ds(on) static drain-source on-resistance m w i s =-1a,v gs =0v v ds =-5v, i d =-1a v gs =-2.5v, i d =-1a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a zero gate voltage drain current body diode reverse recovery time drain-source breakdown voltage i d =-250 m a, v gs =0v v gs =-10v, i d =-1a reverse transfer capacitance i f =-1a, di/dt=100a/ m s v gs =0v, v ds =-10v, f=1mhz switching parameters v ds =v gs i d =-250 m a v ds =0v, v gs =12v rev 0: oct. 2012 www.aosmd.com page 2 of 5
AOC2423 typical electrical and thermal characteristics 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 -i d (a) -v gs (volts) figure 2: transfer characteristics 20 40 60 80 100 120 140 0 1 2 3 4 5 6 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-2.5v i d =-1a v gs =-10v i d =-1a v gs =-4.5v i d =-1a 25 c 125 c v ds =-5v v gs =-2.5v v gs =-10v 0 5 10 15 20 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics v gs =-1.5v -2v -3.5v -10v -2.5v -4.5v v gs =-4.5v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 20 40 60 80 100 120 140 160 180 0 2 4 6 8 10 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =-1a 25 c 125 c rev 0: oct. 2012 www.aosmd.com page 3 of 5
AOC2423 typical electrical and thermal characteristics 0 2 4 6 8 10 0 2 4 6 8 10 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 0 5 10 15 20 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-10v i d =-1a 0 10 20 30 40 50 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction - to - t j(max) =150 c t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe operating area 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms figure 10: single pulse power rating junction - to - ambient operating area 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =200 c/w rev 0: oct. 2012 www.aosmd.com page 4 of 5
AOC2423 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform d u t v gs d iode r ecovery t est c ircuit & w aveform s v ds + rr q = - idt - + v d c d u t v d d v g s v ds v g s r l r g v gs v d s 1 0% 90 % r es istiv e s w itch ing t e st c ircu it & w a ve fo rm s t t r d (o n ) t o n t d (o ff) t f t o ff ig v gs - + vd c l v ds isd isd v ds - i f di/dt i r m v dd v dd t rr rev 0: oct. 2012 www.aosmd.com page 5 of 5
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